AUIRF7103QTR
MOSFET 2N-CH 50V 3A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies AUIRF7103QTR is a dual N-channel MOSFET array from the HEXFET® series, designed for automotive applications. This AEC-Q101 qualified component features a Drain to Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 3A at 25°C. The low on-resistance of 130mOhm (Max) at 3A, 10V, coupled with a gate charge (Qg) of 15nC @ 10V and input capacitance (Ciss) of 255pF @ 25V, makes it suitable for power switching applications. With a maximum power dissipation of 2.4W and an operating temperature range of -55°C to 175°C, this device is packaged in an 8-SOIC (0.154", 3.90mm Width) format, supplied on tape and reel. This MOSFET array is utilized in automotive systems requiring efficient power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 255pF @ 25V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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