2N7002DW L6327
MOSFET 2N-CH 60V 0.3A SOT363Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ 2N7002DW-L6327 is a dual N-channel MOSFET array designed for efficient switching applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 300mA at 25°C. The low on-resistance of 3 Ohm is achieved at 500mA and 10V gate-to-source voltage (Vgs). Its logic-level gate threshold (Vgs(th) max of 2.5V at 250µA) facilitates direct control from lower voltage microcontrollers. Key parameters include a maximum power dissipation of 500mW and a gate charge (Qg) of 0.6nC at 10V. The MOSFET array is housed in a compact PG-SOT363-PO package (6-VSSOP, SC-88) suitable for surface mounting and is supplied on tape and reel. This component finds application in areas such as battery management, consumer electronics, and general-purpose switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 300mA |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PG-SOT363-PO |
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