SDB20S30
DIODE ARR SIC SCHOT 300V TO220Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies CoolSiC™+ SDB20S30 is a SiC Schottky diode array featuring a common cathode configuration. This component offers a 300 V reverse voltage rating and a 10 A average rectified current per diode. It exhibits a low forward voltage of 1.7 V at 10 A and a minimal reverse leakage current of 200 µA at 300 V. The SDB20S30 is notable for its zero reverse recovery time, facilitating high-efficiency switching. Packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, it is supplied in Tape & Reel (TR). This diode array is suitable for applications in power conversion and motor drives. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: CoolSiC™+RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Supplier Device Package | PG-TO220-3-45 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V |
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