IDW40G65C5BXKSA1
DIODE ARR SIC 650V 20A TO247-3Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies IDW40G65C5BXKSA1 is a Silicon Carbide (SiC) Schottky diode array, part of the CoolSiC™+ series. This component features a common cathode configuration with two diodes, offering a maximum DC reverse voltage of 650 V and an average rectified current of 20 A per diode. The forward voltage drop is rated at a maximum of 1.7 V at 20 A. Designed for through-hole mounting in a TO-247-3 package, it operates across a junction temperature range of -55°C to 175°C. The reverse leakage current is specified at 210 µA at 650 V. This device is suitable for applications requiring high-efficiency power conversion, including electric vehicle charging, solar inverters, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 20A (DC) |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 210 µA @ 650 V |
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