IDW32G65C5BXKSA1
DIODE ARR SIC 650V 16A TO247-3Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies IDW32G65C5BXKSA1 is a SiC Schottky diode array featuring a common cathode configuration. This component offers a DC reverse voltage rating of 650 V and an average rectified current of 16 A per diode. The forward voltage (Vf) is a maximum of 1.7 V at 16 A, with a reverse leakage current of 200 µA at 650 V. Operating reliably across a junction temperature range of -55°C to 175°C, this diode array is housed in a TO-247-3 package, suitable for through-hole mounting. It is designed for applications requiring fast recovery characteristics. This component finds utility in power conversion systems for electric vehicles, industrial power supplies, and renewable energy infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 16A (DC) |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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