IDW30S120FKSA1
DIODE ARR SIC 1200V 15A TO247-3Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies CoolSiC™+ Diode Array IDW30S120FKSA1, a Silicon Carbide Schottky diode array, features a common cathode configuration with two diodes. This component offers a maximum DC reverse voltage of 1200 V and a per-diode average rectified current of 15 A (DC). The forward voltage drop is a maximum of 1.8 V at 30 A. Reverse leakage current is rated at 305 µA at 1200 V. Designed for through-hole mounting in a TO-247-3 package, it operates across a junction temperature range of -55°C to 175°C. Notably, it exhibits no significant reverse recovery time above 500 mA (Io). This device is utilized in high-performance applications within the electric vehicle, industrial power supply, and renewable energy sectors.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 15A (DC) |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Current - Reverse Leakage @ Vr | 305 µA @ 1200 V |
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