IDW24G65C5BXKSA1
DIODE ARR SIC 650V 12A TO247-3Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies presents the IDW24G65C5BXKSA1, a Silicon Carbide (SiC) Schottky diode array from the CoolSiC™+ series. This component features a common cathode configuration with two diodes, rated for 650V reverse voltage and capable of handling an average rectified current of 12A per diode. The forward voltage drop is a maximum of 1.7V at 12A. Operating within a junction temperature range of -55°C to 175°C, this through-hole device is housed in a TO-247-3 package. It exhibits a reverse leakage current of 190 µA at 650 V and is classified with a fast recovery speed. Applications for this advanced semiconductor technology include power factor correction (PFC) circuits and switch-mode power supplies across various industrial and automotive sectors.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 12A (DC) |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 190 µA @ 650 V |
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