IDW20G65C5BXKSA1
DIODE ARR SIC 650V 10A TO247-3Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies CoolSiC™+ IDW20G65C5BXKSA1 is a Silicon Carbide Schottky diode array featuring a common cathode configuration. This device offers a 650V reverse voltage capability and a continuous forward current rating of 10A per diode. With a typical forward voltage drop of 1.7V at 10A, it provides excellent conduction loss characteristics. The TO-247-3 package facilitates through-hole mounting for robust thermal management. Operating across a junction temperature range of -55°C to 175°C, this diode array is well-suited for demanding applications in power factor correction, motor drives, and renewable energy systems. Its SiC technology ensures high efficiency and reliability.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
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