DDB6U215N16LHOSA1
DIODE MODULE GP 1600VManufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies DDB6U215N16LHOSA1 is a diode module featuring three independent diodes. This chassis mount module is designed for applications requiring high voltage blocking capabilities, with a maximum DC reverse voltage (Vr) of 1600 V. Each diode exhibits a forward voltage (Vf) of 1.61 V at a forward current (If) of 300 A. The component operates within a junction temperature range of -40°C to 150°C and has a reverse leakage current of 10 mA at 1600 V. The module utilizes standard recovery speed, characterized by a recovery time greater than 500 ns for currents over 200 mA. This device is suitable for power electronics, motor drives, and industrial power supplies. The DDB6U215N16LHOSA1 is supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Diode Configuration | 3 Independent |
| Current - Average Rectified (Io) (per Diode) | - |
| Supplier Device Package | Module |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.61 V @ 300 A |
| Current - Reverse Leakage @ Vr | 10 mA @ 1600 V |