DD800S17H4B2BOSA2
DIODE MOD GP 1700V AGIHMB130-1Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies AG-IHMB130-1 chassis mount diode module, part number DD800S17H4B2BOSA2, offers a robust solution for high-power applications. This module features two independent diodes, each rated for a maximum DC reverse voltage of 1700 V. The forward voltage drop is a nominal 2.1 V at a forward current of 800 A per diode. Designed for standard recovery applications, it exhibits a recovery time greater than 500 ns with an average rectified current (Io) exceeding 200 mA per diode. The operating junction temperature range is from -40°C to 150°C. This component is typically utilized in industrial power conversion, motor drives, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | - |
| Supplier Device Package | AG-IHMB130-1 |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 800 A |
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