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DD1200S33KL2CB5NOSA1

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DD1200S33KL2CB5NOSA1

DIODE MODULE GP 3300V 1200A

Manufacturer: Infineon Technologies

Categories: Diode Arrays

Quality Control: Learn More

Infineon Technologies DD1200S33KL2CB5NOSA1 is a high-power diode module featuring two independent diodes. This component offers a maximum DC reverse voltage (Vr) of 3300V and an average rectified current (Io) of 1200A per diode. The forward voltage drop (Vf) is specified at 3.5V at 1200A. Designed for robust power applications, this module utilizes standard recovery technology with a speed rating of >500ns at >200mA. It is presented in a 4-lead block package suitable for chassis mounting. The operating junction temperature ranges from -40°C to 125°C. This diode array is commonly employed in industrial power conversion, motor drives, and power grid applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseBlock, 4 Lead
Mounting TypeChassis Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Diode Configuration2 Independent
Current - Average Rectified (Io) (per Diode)1200A (DC)
Supplier Device PackageModule
Operating Temperature - Junction-40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max)3300 V
Voltage - Forward (Vf) (Max) @ If3.5 V @ 1200 A

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