DD1200S33K2CB3NOSA1
DIODE MOD GP 3300V 1200A AIHV130Manufacturer: Infineon Technologies
Categories: Diode Arrays
Quality Control: Learn More
Infineon Technologies DD1200S33K2CB3NOSA1 is a two-independent diode array module designed for high-power applications. This chassis mount component offers a maximum DC reverse voltage of 3300V and an average rectified current of 1200A per diode. Featuring a standard recovery speed with a forward voltage drop of 3.5V at 1200A, this module operates within a junction temperature range of -40°C to 125°C. The A-IHV130-3 package is suitable for demanding industrial environments, including power generation, industrial motor drives, and high-voltage DC transmission systems. Its robust construction and high current handling capabilities make it an ideal choice for power electronics designers.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 1200A (DC) |
| Supplier Device Package | A-IHV130-3 |
| Operating Temperature - Junction | -40°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 3300 V |
| Voltage - Forward (Vf) (Max) @ If | 3.5 V @ 1200 A |
Request a Quote
Clients Also Buy
BAW79DH6327XTSA1
DIODE ARRAY GP 400V 500MA SOT89
DD171N12KAHPSA2
DIODE MODULE GP 1200V 171A
IDW60C65D1XKSA1
DIODE ARRAY GP 650V 30A TO247-3
