DD1000S33HE3B60BOSA1
DIODE MOD GP 3300V AGIHVB130-3Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies DD1000S33HE3B60BOSA1 is a diode module featuring two independent diodes. Each diode offers a maximum DC reverse voltage of 3300 V and an average rectified current (Io) of 1000 A. The forward voltage drop (Vf) is specified at 3.85 V at 1000 A. This module utilizes standard recovery technology with a speed greater than 500 ns at > 200 mA (Io). The component is designed for chassis mounting and operates within a junction temperature range of -40°C to 150°C. Packaged in a Module, the supplier device package is identified as AG-IHVB130-3. This diode array is suitable for high-power applications in industries such as industrial motor drives, renewable energy systems, and power grid infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 1000A (DC) |
| Supplier Device Package | AG-IHVB130-3 |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 3300 V |
| Voltage - Forward (Vf) (Max) @ If | 3.85 V @ 1000 A |