BAW56SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363Manufacturer: Infineon Technologies
Categories: Diode Arrays
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The Infineon Technologies BAW56SE6327BTSA1 is a diode array featuring two pairs of common anode configuration. This surface mount component, housed in a 6-VSSOP, SC-88, SOT-363 package, provides a maximum DC reverse voltage of 80 V and a per-diode forward current capability of 200 mA. It exhibits a typical forward voltage of 1.25 V at 150 mA and a low reverse leakage current of 150 nA at 70 V. With a reverse recovery time of 4 ns, this device is suitable for general-purpose, small-signal applications up to 200 mA. The operating junction temperature range extends to 150°C (Max). This component is commonly utilized in automotive and industrial electronics. The BAW56SE6327BTSA1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 2 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Supplier Device Package | PG-SOT363-PO |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 150 nA @ 70 V |
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