BAW56E6327
DIODE ARRAY GP 80V 200MA SOT23Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies BAW56E6327 is a dual diode array featuring a common anode configuration within a compact PG-SOT23 (TO-236-3, SC-59, SOT-23-3) surface mount package. This component offers a maximum DC reverse voltage of 80V per diode and an average rectified current handling capability of 200mA. The forward voltage drop is specified as 1.25V at 150mA. With a reverse leakage current of 150nA at 70V and a fast reverse recovery time of 4ns, this diode array is suitable for small signal applications. Its operating junction temperature range extends up to 150°C (Max). The BAW56E6327 is commonly utilized in automotive, industrial, and telecommunications sectors for signal switching and protection circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Supplier Device Package | PG-SOT23 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 150 nA @ 70 V |
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