BAW 56W H6327
DIODE ARRAY GP 80V 200MA SOT323Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies BAW-56W-H6327 is a dual diode array featuring a common anode configuration. This component offers a reverse voltage rating of 80 V with a maximum forward voltage drop of 1.25 V at 150 mA. Each diode in the array is rated for 200 mA average rectified current, with a low reverse leakage of 150 nA at 70 V. The device boasts a fast reverse recovery time of 4 ns, suitable for small signal applications up to 200 mA. Packaged in a compact PG-SOT323 (SC-70) surface mount package, the BAW-56W-H6327 is designed for efficient operation with a maximum junction temperature of 150°C. This diode array finds application in various electronic designs across telecommunications, consumer electronics, and industrial control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Supplier Device Package | PG-SOT323 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 150 nA @ 70 V |
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