BAS16SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363Manufacturer: Infineon Technologies
Categories: Diode Arrays
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Infineon Technologies BAS16SE6327BTSA1 is a three-diode array featuring independent configurations. Each diode offers a maximum DC reverse voltage (Vr) of 80V and supports an average rectified forward current (Io) of 200mA. The device exhibits a forward voltage (Vf) of 1.25V at 150mA and a reverse leakage current of 1µA at 75V. With a reverse recovery time (trr) of 4ns, this component is suitable for general-purpose applications requiring fast switching. Operating at a maximum junction temperature of 150°C, it is housed in a compact PG-SOT363-PO (SOT-363) surface-mount package. This diode array finds application in industrial control, telecommunications, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 3 Independent |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Supplier Device Package | PG-SOT363-PO |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V |