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SMBT3906SH6327XTSA1

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SMBT3906SH6327XTSA1

TRANS 2PNP 40V 0.2A SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

The Infineon Technologies SMBT3906SH6327XTSA1 is a bipolar transistor array featuring two PNP transistors in a single PG-SOT363-PO package. This surface-mount component offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. With a transition frequency of 250MHz and a power dissipation of 330mW, it is suitable for applications requiring moderate gain and switching speeds. The minimum DC current gain (hFE) is 100 at 10mA and 1V, and the saturation voltage is a maximum of 400mV at 5mA base and 50mA collector current. The device operates at temperatures up to 150°C. This component finds application in general-purpose amplification and switching circuits across various industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Power - Max330mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-PO

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