SMBT3906SE6327HTSA1
TRANS 2PNP 40V 0.2A SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
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The Infineon Technologies SMBT3906SE6327HTSA1 is a bipolar transistor array featuring two PNP transistors. This device offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It exhibits a transition frequency of 250MHz and a maximum power dissipation of 330mW. The minimum DC current gain (hFE) is 100 at 10mA and 1V. The transistor array is supplied in a PG-SOT363-PO package, suitable for surface mounting. The operating temperature range extends to 150°C. This component finds application in various industrial and consumer electronics, including general-purpose amplification and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 330mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT363-PO |
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