SMBT3904SE6327HTSA1
TRANS 2NPN 40V 0.2A SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
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Infineon Technologies SMBT3904SE6327HTSA1 is a dual NPN bipolar junction transistor array designed for high-performance applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 200mA. With a transition frequency of 300MHz and a maximum power dissipation of 330mW, it is suitable for signal amplification and switching tasks. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage, and the saturation voltage (Vce(sat)) is a maximum of 300mV at 5mA base current and 50mA collector current. The collector cutoff current (ICBO) is a maximum of 50nA. Operating at junction temperatures up to 150°C, this device is housed in a compact PG-SOT363-PO package, ideal for surface mounting. It is commonly utilized in telecommunications, industrial automation, and consumer electronics. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 330mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | PG-SOT363-PO |
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