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SMBT3904PNH6327XTSA1

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SMBT3904PNH6327XTSA1

TRANS NPN/PNP 40V 0.2A SOT363-6

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Infineon Technologies SMBT3904PNH6327XTSA1 is a bipolar transistor array featuring one NPN and one PNP transistor. This SOT-363 packaged device offers a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. The transistors exhibit a minimum DC current gain (hFE) of 100 at 10mA and 1V, with a transition frequency of 250MHz. The maximum power dissipation is 250mW, and the device operates at temperatures up to 150°C. Saturation voltage at 5mA base and 50mA collector current is a maximum of 400mV. This component is suitable for applications in automotive and industrial sectors requiring compact, dual-transistor solutions. The package is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max250mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-PO

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