SMBT3904PNE6327HTSA1
TRANS NPN/PNP 40V 0.2A SOT363-6Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Infineon Technologies SMBT3904PNE6327HTSA1 is a bipolar transistor array featuring one NPN and one PNP transistor in a single PG-SOT363-PO package. This surface mount device offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. With a transition frequency of 250MHz and a power dissipation of 250mW, it is suitable for applications requiring efficient switching and amplification. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V Vce. Saturation voltage (Vce) is a maximum of 400mV at 5mA base current and 50mA collector current. The device operates at temperatures up to 150°C (TJ) and is supplied on a tape and reel. This component is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BC856SE6327BTSA1
TRANS 2PNP 65V 0.1A SOT363
BCV62BE6433HTMA1
TRANS 2PNP 30V 0.1A SOT143
BC846UE6327
BIPOLAR GEN PURPOSE TRANSISTOR
