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BCM856SE6327BTSA1

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BCM856SE6327BTSA1

TRANS 2PNP 65V 0.1A SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

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Infineon Technologies BCM856SE6327BTSA1 is a bipolar transistor array featuring two PNP transistors in a PG-SOT363-PO package. This surface mount component offers a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it is suitable for applications requiring compact, high-performance switching. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA, 5V, and a low collector cutoff current of 15nA (ICBO). Operating temperature ranges up to 150°C, making it robust for various industrial and consumer electronics applications. The component is supplied on a tape and reel for automated assembly processes.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)65V
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-PO

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