BCM846SE6327HTSA1
TRANS 2NPN 65V 0.1A SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
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Infineon Technologies BCM846SE6327HTSA1 is a dual NPN bipolar transistor array designed for surface mount applications. This component operates with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It features a transition frequency of 250MHz and a maximum power dissipation of 250mW. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA and 5V, with a Vce saturation of 650mV at 5mA and 100mA. The collector cutoff current (ICBO) is a maximum of 15nA. Operating at junction temperatures up to 150°C, this array is housed in a PG-SOT363-PO package, commonly known as SOT-363. The BCM846SE6327HTSA1 is supplied in Tape & Reel packaging. This device finds application in various electronics, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT363-PO |
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