BC856SE6327BTSA1
TRANS 2PNP 65V 0.1A SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Infineon Technologies BC856SE6327BTSA1 is a dual PNP bipolar junction transistor (BJT) array. This device features a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it is suitable for applications requiring moderate amplification and switching. The minimum DC current gain (hFE) is 200 at 2mA and 5V. It operates within a temperature range of 150°C (TJ). The transistor type is 2 PNP (Dual), and the saturation voltage (Vce Sat) is a maximum of 650mV at 5mA, 100mA. The collector cutoff current (ICBO) is a maximum of 15nA. This component is housed in a PG-SOT363-PO package, designed for surface mounting, and is supplied in Tape & Reel (TR) packaging. It finds application in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BCV62BE6433HTMA1
TRANS 2PNP 30V 0.1A SOT143
SMBT3904UPNE6327HTSA1
TRANS NPN/PNP 40V 0.2A SC74-6
BC817UPNE6327HTSA1
TRANS NPN/PNP 45V 0.5A SC74
