Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays

BC847SH6827XTSA1

Banner
productimage

BC847SH6827XTSA1

TRANS 2NPN 45V 0.1A SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Infineon Technologies BC847SH6827XTSA1 is a dual NPN bipolar junction transistor (BJT) array in a PG-SOT363-PO surface mount package. This component offers a collector-emitter breakdown voltage of 45V, a maximum collector current of 100mA, and a transition frequency of 250MHz. With a minimum DC current gain (hFE) of 200 at 2mA and 5V, and a maximum power dissipation of 250mW, it features a Vce saturation of 600mV at 5mA collector current. The device operates within a junction temperature range of 150°C. Applications include general-purpose switching and amplification in consumer electronics, industrial automation, and automotive systems. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-PO

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BC856SE6327BTSA1

TRANS 2PNP 65V 0.1A SOT363

product image
BC846UE6327

BIPOLAR GEN PURPOSE TRANSISTOR

product image
BC847SH6327XTSA1

TRANS 2NPN 45V 0.1A SOT363-6