Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays

BC847SH6730XTMA1

Banner
productimage

BC847SH6730XTMA1

TRANSISTOR NPN DUAL SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Infineon Technologies BC847SH6730XTMA1 is a dual NPN bipolar transistor array housed in a PG-SOT363-6 package. This AEC-Q101 qualified component offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It features a transition frequency of 250MHz and a power dissipation of 250mW. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA and 5V, with a Vce saturation of 600mV at 5mA collector current and corresponding base current. Designed for surface mounting, it operates across an extended temperature range up to 150°C. This component is suitable for automotive applications and is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-6
GradeAutomotive
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy