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BC847SE6433BTMA1

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BC847SE6433BTMA1

TRANS 2NPN 45V 0.1A SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

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Infineon Technologies BC847SE6433BTMA1 is a bipolar transistor array featuring two NPN transistors in a PG-SOT363-PO package. This device offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 200 at 2mA and 5V, it is suitable for general-purpose amplification and switching applications. The transistor array dissipates a maximum power of 250mW and operates at temperatures up to 150°C. Key parameters include a collector cutoff current of 15nA (ICBO) and a Vce saturation of 600mV at 5mA/100mA. This component is commonly utilized in consumer electronics, industrial automation, and automotive systems. Supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-PO

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