BC847SE6327BTSA1
TRANS 2NPN 45V 0.1A SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Infineon Technologies BC847SE6327BTSA1 is a bipolar junction transistor (BJT) array featuring two NPN transistors. This component is designed for surface mounting within a PG-SOT363-PO package, commonly known as SOT-363. It offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 100mA. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, with a transition frequency of 250MHz. The maximum power dissipation is 250mW, and it operates at an ambient temperature up to 150°C. This transistor array finds application in various industrial and consumer electronics, including signal amplification and switching circuits. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BC856SE6327BTSA1
TRANS 2PNP 65V 0.1A SOT363
BC846UE6327
BIPOLAR GEN PURPOSE TRANSISTOR
BC847SH6327XTSA1
TRANS 2NPN 45V 0.1A SOT363-6
