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BC847SE6327BTSA1

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BC847SE6327BTSA1

TRANS 2NPN 45V 0.1A SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Infineon Technologies BC847SE6327BTSA1 is a bipolar junction transistor (BJT) array featuring two NPN transistors. This component is designed for surface mounting within a PG-SOT363-PO package, commonly known as SOT-363. It offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 100mA. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, with a transition frequency of 250MHz. The maximum power dissipation is 250mW, and it operates at an ambient temperature up to 150°C. This transistor array finds application in various industrial and consumer electronics, including signal amplification and switching circuits. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-PO

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