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BC847PNH6433XTMA1

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BC847PNH6433XTMA1

TRANS NPN/PNP 45V 0.1A SOT363-6

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Infineon Technologies BC847PNH6433XTMA1 is a bipolar transistor array featuring one NPN and one PNP transistor. This component offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 250mW, it is suitable for applications requiring moderate signal amplification and switching. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V Vce. The device operates at a junction temperature up to 150°C and is packaged in a PG-SOT363-PO (6-VSSOP, SC-88, SOT-363) for surface mounting. This array finds use in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT363-PO

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