BC846SE6327BTSA1
TRANS 2NPN 65V 0.1A SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
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Infineon Technologies BC846SE6327BTSA1 is a dual NPN bipolar junction transistor array designed for general-purpose amplification and switching applications. This surface-mount component, housed in a PG-SOT363-PO package, features a collector-emitter breakdown voltage of 65V and can handle a continuous collector current of up to 100mA. With a minimum DC current gain (hFE) of 200 at 2mA, 5V and a transition frequency of 250MHz, it offers robust performance for demanding circuits. The device dissipates a maximum power of 250mW and operates at junction temperatures up to 150°C. Typical applications include consumer electronics, industrial control systems, and automotive electronics where compact, high-performance transistor arrays are required. Supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT363-PO |