BC846PNE6327BTSA1
TRANS NPN/PNP 65V 0.1A SOT363-6Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays
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Infineon Technologies BC846PNE6327BTSA1 is a bipolar transistor array featuring one NPN and one PNP transistor. This device offers a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it is suitable for various applications including consumer electronics and industrial automation. The minimum DC current gain (hFE) is 200 at 2mA collector current and 5V collector-emitter voltage. The device operates at a maximum junction temperature of 150°C and is supplied in a PG-SOT363-PO package for surface mounting, presented in tape and reel packaging. Saturation voltage (Vce) is a maximum of 650mV at 5mA base current and 100mA collector current. Collector cutoff current (ICBO) is a maximum of 15nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT363-PO |
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