BCR48PNH6433XTMA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR48PNH6433XTMA1 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This component offers a collector-emitter breakdown voltage of 50V. The NPN transistor provides a collector current of up to 70mA with a transition frequency of 100MHz, while the PNP transistor supports up to 100mA with a transition frequency of 200MHz. Both transistors are configured with integrated base resistors, specified as 47kOhms for the NPN and 47kOhms for the PNP, with an additional 2.2kOhms resistor present. The device has a maximum power dissipation of 250mW. It is supplied in a PG-SOT363-PO package, a 6-VSSOP, SC-88, or SOT-363 form factor, suitable for surface mounting. The minimum DC current gain (hFE) is 70 at 5mA collector current and 5V collector-emitter voltage. Applications for this component can be found in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 70mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 100MHz, 200MHz |
| Resistor - Base (R1) | 47kOhms, 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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