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BCR48PNE6433BTMA1

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BCR48PNE6433BTMA1

TRANS NPN/PNP PREBIAS SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays, Pre-Biased

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Infineon Technologies BCR48PNE6433BTMA1 is a surface mount dual bipolar transistor array featuring one NPN and one PNP transistor. This pre-biased configuration offers integrated base resistors, simplifying circuit design and reducing component count. Key specifications include a collector-emitter breakdown voltage of 50V, collector current capabilities of 70mA for the NPN and 100mA for the PNP, and transition frequencies of 100MHz and 200MHz respectively. The device has a maximum power dissipation of 250mW and is supplied in a PG-SOT363-PO package, commonly known as SOT-363 or SC-88. Integrated base resistors are specified at 47kOhms for R1 (NPN), 47kOhms for R1 (PNP), and 47kOhms for R2 (PNP). Typical DC current gain (hFE) is 70 at 5mA collector current and 5V Vce. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. This component is suitable for applications in consumer electronics, industrial control, and communication systems where space and component count reduction are critical. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)70mA, 100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Frequency - Transition100MHz, 200MHz
Resistor - Base (R1)47kOhms, 2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackagePG-SOT363-PO

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