BCR48PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR48PNE6327BTSA1 is a dual, pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device is housed in a compact PG-SOT363-PO package, suitable for surface mounting. It offers collector currents of 70mA for the NPN and 100mA for the PNP, with a maximum collector-emitter breakdown voltage of 50V. The specified DC current gain (hFE) is a minimum of 70 at 5mA, 5V. Transition frequencies are 100MHz for the NPN and 200MHz for the PNP. The integrated base resistors are 47kOhms for R1 (NPN) and 2.2kOhms for R1 (PNP), with a 47kOhms resistor for R2 (PNP). Saturation voltage (Vce Sat) is 300mV at 500µA, 10mA. Maximum power dissipation is 250mW. This component is commonly utilized in industrial and automotive applications. It is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 70mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 100MHz, 200MHz |
| Resistor - Base (R1) | 47kOhms, 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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