BCR35PNE6433HTMA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR35PNE6433HTMA1 is a dual pre-biased bipolar transistor featuring one NPN and one PNP element in a compact PG-SOT363-PO package. This surface mount component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors, R1 at 10kOhms and R2 at 47kOhms, simplify circuit design by providing fixed biasing. With a typical DC current gain (hFE) of 70 at 5mA and 5V, and a transition frequency of 150MHz, this device is suitable for various applications in the automotive and industrial sectors. The power dissipation is rated at 250mW, and it is supplied on tape and reel. Saturation voltage is specified at 300mV maximum for 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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