BCR35PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Infineon Technologies BCR35PNE6327BTSA1 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor, housed in a PG-SOT363-PO package. This dual transistor configuration offers integrated base resistors, specifically 10 kOhms for R1 and 47 kOhms for R2. It supports a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 100mA. The device exhibits a transition frequency of 150MHz and a maximum power dissipation of 250mW. Typical DC current gain (hFE) is 70 at 5mA collector current and 5V Vce. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. This component is suitable for surface mount applications and is supplied on tape and reel. Industries utilizing this type of component include automotive and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BCR129SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR10PNH6327XTSA1
TRANS NPN/PNP PREBIAS SOT363
BCR198SH6827XTSA1
TRANS 2PNP PREBIAS 0.25W SOT363
