BCR22PNE6433HTMA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR22PNE6433HTMA1 is a dual, pre-biased bipolar transistor in a PG-SOT363-PO package. This component integrates one NPN and one PNP transistor, each featuring built-in base resistors. The NPN transistor offers a collector current of up to 100mA, a breakdown voltage of 50V, and a transition frequency of 130MHz. The PNP transistor also operates with a 50V breakdown voltage. Both transistors exhibit a typical DC current gain (hFE) of 50 at 5mA collector current and 5V Vce. The device is supplied on a Tape & Reel (TR) for automated assembly. This transistor array is suitable for applications requiring simplified switching and amplification circuits in areas such as consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | PG-SOT363-PO |
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