BCR22PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR22PNE6327BTSA1 is a dual pre-biased bipolar transistor in a PG-SOT363-PO package. This component integrates one NPN and one PNP transistor, each featuring integrated base resistors of 22kOhms. The device supports a collector emitter breakdown voltage of up to 50V and a maximum collector current of 100mA. With a transition frequency of 130MHz and a maximum power dissipation of 250mW, it achieves a minimum DC current gain (hFE) of 50 at 5mA collector current and 5V Vce. The Vce saturation is 300mV at 500µA base current and 10mA collector current. This surface mount device, supplied on tape and reel, is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | PG-SOT363-PO |
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