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BCR198SH6827XTSA1

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BCR198SH6827XTSA1

TRANS 2PNP PREBIAS 0.25W SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays, Pre-Biased

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Infineon Technologies BCR198SH6827XTSA1 is a dual PNP pre-biased bipolar transistor array in a PG-SOT363-PO package. It offers a collector-emitter voltage of 50V and a continuous collector current of 100mA, with a power dissipation of 250mW. The device features integrated base resistors (R1 = 47kOhms, R2 = 47kOhms), simplifying circuit design and reducing component count. With a transition frequency of 190MHz and a minimum DC current gain of 70 at 5mA collector current and 5V collector-emitter voltage, it is suitable for various switching and amplification applications. Typical saturation voltage is 300mV at 500µA base current and 10mA collector current. This component is commonly utilized in industrial automation, consumer electronics, and automotive systems. Supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Frequency - Transition190MHz
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackagePG-SOT363-PO

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