BCR185SB6327XT
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR185SB6327XT is a pre-biased bipolar transistor array featuring two PNP transistors. This dual-PNP configuration offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 200MHz and a power dissipation of 250mW, it is suitable for applications requiring low power consumption and moderate switching speeds. The integrated base resistors, R1 at 10kOhms and R2 at 47kOhms, simplify circuit design by providing a fixed bias. The device exhibits a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. Saturation voltage is specified at 300mV at 500µA base current and 10mA collector current. Supplied in a PG-SOT363-PO package, this component is designed for surface mounting and is delivered on tape and reel. It finds application in automotive, industrial, and consumer electronics for signal switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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