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BCR183UE6327HTSA1

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BCR183UE6327HTSA1

TRANS 2PNP PREBIAS 0.25W SC74

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays, Pre-Biased

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Infineon Technologies BCR183UE6327HTSA1 is a dual PNP pre-biased bipolar transistor array. This device features two PNP transistors integrated in a single PG-SC74-6 (SC-74, SOT-457) surface mount package. Each transistor is internally equipped with base resistors, R1 (10 kOhms) and R2 (10 kOhms), simplifying circuit design by eliminating external biasing components. The BCR183UE6327HTSA1 offers a collector current capability of up to 100mA and a collector-emitter voltage of 50V. It exhibits a transition frequency of 200MHz and a maximum power dissipation of 250mW. The minimum DC current gain (hFE) is 30 at 5mA, 5V. Saturation voltage (Vce) is 300mV at 500µA, 10mA. This component is commonly utilized in digital logic circuits, switching applications, and general-purpose amplification within the consumer electronics, industrial automation, and telecommunications sectors. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackagePG-SC74-6

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