BCR183SH6327XTSA1
TRANS PREBIAS 2PNP 50V SOT363-6Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Infineon Technologies BCR183SH6327XTSA1 is a dual 2 PNP pre-biased bipolar transistor in a PG-SOT363-PO package. This surface mount component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 30 at 5mA, 5V and a transition frequency of 200MHz. Each transistor includes integrated base resistors of 10kOhms (R1) and 10kOhms (R2) for simplified circuit design. The transistor type is 2 PNP - Pre-Biased (Dual) with a maximum power dissipation of 250mW. This component is commonly utilized in industrial and consumer electronics applications requiring precise signal amplification and switching. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BCR129SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR10PNH6327XTSA1
TRANS NPN/PNP PREBIAS SOT363
BCR35PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363
