BCR183SE6433BTMA1
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR183SE6433BTMA1 is a dual PNP pre-biased bipolar transistor array designed for surface mount applications. This component features a PG-SOT363-PO package and is supplied on tape and reel. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device provides a minimum DC current gain (hFE) of 30 at 5mA and 5V. With a transition frequency of 200MHz and a maximum power dissipation of 250mW, it is suitable for various signal processing and switching applications. The integrated base resistors are 10kOhms for both R1 and R2. This transistor array is commonly utilized in industrial and consumer electronics, including automotive systems and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |
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