BCR169SH6327XTSA1
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR169SH6327XTSA1 is a dual PNP pre-biased bipolar transistor array. This component features a collector current capability of 100mA and a breakdown voltage of 50V. The transition frequency is 200MHz, with a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage. It includes an integrated base resistor of 4.7kOhms. The device is supplied in a PG-SOT363-PO package, a 6-VSSOP, SC-88 configuration, suitable for surface mounting. Maximum power dissipation is 250mW. This component finds application in automotive, industrial, and consumer electronics sectors requiring compact, high-performance signal conditioning and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | PG-SOT363-PO |
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