BCR169SE6327BTSA1
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Infineon Technologies BCR169SE6327BTSA1 is a dual PNP pre-biased bipolar transistor array. This device features a collector current of 100mA and a collector-emitter breakdown voltage of 50V. It offers a transition frequency of 200MHz and a maximum power dissipation of 250mW. The integrated base resistor (R1) is 4.7kOhms. Packaged in a compact PG-SOT363-PO (6-VSSOP, SC-88, SOT-363), this component is suitable for surface mounting. The BCR169SE6327BTSA1 is commonly utilized in industrial, automotive, and consumer electronics applications requiring simplified circuit design.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BCR183UE6327HTSA1
TRANS 2PNP PREBIAS 0.25W SC74
BCR48PNE6433BTMA1
TRANS NPN/PNP PREBIAS SOT363
BCR108SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363