BCR148SE6433HTMA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR148SE6433HTMA1 is a dual NPN pre-biased bipolar transistor in a PG-SOT363-PO package. This surface mount component offers a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. With a transition frequency of 100MHz and a maximum power dissipation of 250mW, it features integrated base resistors of 47kOhms for simplified circuit design. The device exhibits a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V collector-emitter voltage, and a Vce saturation of 300mV at 500µA base current and 10mA collector current. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 100MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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