BCR141SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR141SH6327XTSA1 is a dual NPN pre-biased bipolar transistor. This surface mount device, packaged in a PG-SOT363-PO (6-VSSOP, SC-88, SOT-363), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 130MHz and a maximum power dissipation of 250mW. The integrated base resistors are specified at 22kOhms (R1) and 22kOhms (R2), with a minimum DC current gain (hFE) of 50 at 5mA collector current and 5V collector-emitter voltage. Saturation voltage at 500µA base current and 10mA collector current is 300mV maximum. This component is suitable for applications in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | PG-SOT363-PO |
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