BCR141SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR141SE6327BTSA1 is a dual, pre-biased NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a PG-SOT363-PO package, also known as SOT-363 or SC-88. It offers a collector emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor array includes integrated base resistors, specified as 22kOhms (R1) and 22kOhms (R2), simplifying circuit design. With a transition frequency of 130MHz and a power dissipation of 250mW, it is suitable for applications requiring precise signal switching and amplification. The minimum DC current gain (hFE) is 50 at 5mA collector current and 5V Vce. Typical saturation voltage is 300mV at 500µA base current and 10mA collector current. Industries utilizing this component include consumer electronics and industrial automation. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | PG-SOT363-PO |
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