BCR135SH6827XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR135SH6827XTSA1 is a dual 2 NPN pre-biased bipolar transistor in a PG-SOT363-PO package. This surface mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Featuring integrated base resistors of 10kOhms (R1) and 47kOhms (R2), it provides a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. The device has a transition frequency of 150MHz and a maximum power dissipation of 250mW. It is supplied on tape and reel. This transistor array is commonly utilized in industrial and consumer electronics applications requiring simplified biasing and signal conditioning.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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